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Rohm Semiconductor Electronic Components Datasheet

RZE002P02 Datasheet

1.2V Drive Pch MOSFET

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1.2V Drive Pch MOSFET
RZE002P02
zStructure
Silicon P-channel MOSFET
zFeatures
1) High speed switching.
2) Small package (EMT3).
3) 1.2V drive.
zApplications
Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RZE002P02
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Souce current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
20
±10
±200
±800
100
800
150
150
55 to +150
zDimensions (Unit : mm)
EMT3
1.6
0.3
(3)
0.7
0.55
(2) (1)
0.2 0.2
0.5 0.5
1.0
0.15
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : YK
zInner circuit
(3)
2
(2)
1
(1)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
zThermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
833
Unit
°C/W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

RZE002P02 Datasheet

1.2V Drive Pch MOSFET

No Preview Available !

RZE002P02
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS= ±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 20 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 20V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 10V, ID= 100µA
0.8 1.2 ID= 200mA, VGS= 4.5V
Static drain-source on-state
resistance
RDS
(on)
1.0 1.5
1.3 2.2
1.6 3.5
ID= 100mA, VGS= 2.5V
ID= 100mA, VGS= 1.8V
ID= 40mA, VGS= 1.5V
2.4 9.6 ID= 10mA, VGS= 1.2V
Forward transfer admittance Yfs 0.2 − − S VDS= 10V, ID= 200mA
Input capacitance
Ciss
115
pF VDS= 10V
Output capacitance
Coss 10 pF VGS= 0V
Reverse transfer capacitance Crss 6 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 6 ns VDD 10V
tr
td (off)
4
17
ns ID= 100mA
VGS= 4.5V
ns RL 100
tf 17 ns RG= 10
Total gate charge
Qg 1.4 nC VDD 10V RL 50
Gate-source charge
Qgs 0.3 nC ID= 200mA RG= 10
Gate-drain charge
Qgd 0.3 nC VGS= 4.5V
Pulsed
zBody diode characteristics (Source-drain)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= 200mA, VGS=0V
Pulsed
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.06 - Rev.A


Part Number RZE002P02
Description 1.2V Drive Pch MOSFET
Maker Rohm
Total Page 5 Pages
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