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Rohm Semiconductor Electronic Components Datasheet

RZL025P01 Datasheet

1.5V Drive Pch MOSFET

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Transistors
1.5V Drive Pch MOSFET
RZL025P01
RZL025P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication
Switching
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : YC
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZL025P01
Taping
TR
3000
zEquivalent circuit
(6) (5)
2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
12
±10
±2.5
±10
0.8
10
1.0
150
55 to +150
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
When mounted on a ceramic board.
Symbol
Rth (ch-a)
Limits
125
Unit
°C / W
(4)
1
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
1/5


Rohm Semiconductor Electronic Components Datasheet

RZL025P01 Datasheet

1.5V Drive Pch MOSFET

No Preview Available !

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
44 61 mID= 2.5A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
60 84 mID= 1.2A, VGS= 2.5V
81 121 mID= 1.2A, VGS= 1.8V
Forward transfer admittance
110 220 mID= 0.5A, VGS= 1.5V
Yfs 3.5
S VDS= 6V, ID= 2.5A
Input capacitance
Ciss
1350
pF VDS= 6V
Output capacitance
Coss
130
pF VGS=0V
Reverse transfer capacitance Crss
125
Turn-on delay time
td (on) 9
Rise time
tr 35
Turn-off delay time
td (off)
130
Fall time
tf 85
Total gate charge
Qg 13
Gate-source charge
Qgs 2.5
Gate-drain charge
Qgd 2.0
pF f=1MHz
ns ID= 1.2A
ns VDD 6V
VGS= 4.5V
ns RL 5
ns RG=10
nC VDD 6V, ID= 2.5A
nC VGS= 4.5V
nC RL 2.4, RG=10
Pulsed
zBody diode characteristics(Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= 2.5A, VGS=0V
RZL025P01
2/5


Part Number RZL025P01
Description 1.5V Drive Pch MOSFET
Maker Rohm
Total Page 6 Pages
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