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Rohm Semiconductor Electronic Components Datasheet

RZQ045P01 Datasheet

1.5V Drive Pch MOSFET

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Transistors
1.5V Drive Pch MOSFET
RZQ045P01
RZQ045P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : YG
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZQ045P01
Taping
TR
3000
zEquivalent circuit
(6) (5)
(4)
2
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
12
±10
±4.5
±12
1
12
1.25
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth(ch-a)
Limits
100
Unit
°C / W
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
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Rohm Semiconductor Electronic Components Datasheet

RZQ045P01 Datasheet

1.5V Drive Pch MOSFET

No Preview Available !

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
25 35 mID= 4.5A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
31 43 mID= 2.2A, VGS= 2.5V
39 58 mID= 2.2A, VGS= 1.8V
Forward transfer admittance
50 100 mID= 0.9A, VGS= 1.5V
Yfs 6.5
S VDS= 6V, ID= 4.5A
Input capacitance
Ciss
2450
pF VDS= 6V
Output capacitance
Coss 320 pF VGS=0V
Reverse transfer capacitance Crss
290
Turn-on delay time
td (on) 12
Rise time
tr 75
Turn-off delay time
td (off)
390
Fall time
tf 215
Total gate charge
Qg 31
Gate-source charge
Qgs 4.5
Gate-drain charge
Qgd 4.0
pF f=1MHz
ns ID= 2.2A
ns VDD 6V
VGS= 4.5V
ns RL 2.7
ns RG=10
nC VDD 6V RL 1.3
nC VGS= 4.5V RG=10
nC ID= 4.5A
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= 4.5A, VGS=0V
RZQ045P01
2/5


Part Number RZQ045P01
Description 1.5V Drive Pch MOSFET
Maker Rohm
Total Page 6 Pages
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