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Rohm Semiconductor Electronic Components Datasheet

SH8J62 Datasheet

4V Drive Pch+Pch MOSFET

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SH8J62 pdf
4V Drive Pch+Pch MOSFET
SH8J62
Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SH8J62
Taping
TB
2500
Inner circuit
(8) (7) (6)
(5)
2 2
1 1
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10μs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
30
±20
±4.5
±18
1.6
18
2.0
1.4
150
55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.01 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

SH8J62 Datasheet

4V Drive Pch+Pch MOSFET

No Preview Available !

SH8J62 pdf
SH8J62
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS
(on)
40 56 mΩ ID= −4.5A, VGS= −10V
55 77 mΩ ID= −2.5A, VGS= −4.5V
60 84 mΩ ID= −2.5A, VGS= −4.0V
Forward transfer admittance
Yfs 3.5
S VDS= −10V, ID= −4.5A
Input capacitance
Ciss
800
pF VDS= −10V
Output capacitance
Coss 120 pF VGS=0V
Reverse transfer capacitance Crss
110
Turn-on delay time
td (on) 7
Rise time
tr 15
Turn-off delay time
td (off) 70
Fall time
tf 50
Total gate charge
Qg 8.0
Gate-source charge
Qgs 2.5
Gate-drain charge
Qgd 3.0
Pulsed
pF f=1MHz
ns ID= −2.5A
ns VDD 15V
VGS= −10V
ns RL=6.0Ω
ns RG=10Ω
nC VDD 15V
nC
ID= −4.5A
VGS= −5V
nC RL=3.3Ω / RG=10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
VSD
− −1.2 V
Conditions
IS= −4.5A, VGS=0V
Data Sheet
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.01 - Rev.A


Part Number SH8J62
Description 4V Drive Pch+Pch MOSFET
Maker Rohm
Total Page 6 Pages
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SH8J62 Datasheet PDF
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