900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Rohm Semiconductor Electronic Components Datasheet

SP8K3 Datasheet

Transistor

No Preview Available !

Transistors
Switching (30V, 7.0A)
SP8K3
SP8K3
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
zStructure
Silicon N-channel
MOS FET
zExternal dimensions (Unit : mm)
SOP8
5.0±0.2
0.2±0.1
1.27
0.4±0.1
0.1
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
It is the same ratings for the Tr. 1 and Tr. 2.
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw 10µs, Duty cycle 1%
2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
30
20
±7.0
±28
1.6
6.4
2
150
55 to +150
Unit
www.DataSheet.co.kr
V
V
A
A 1
A
A 1
W 2
°C
°C
zEquivalent circuit
(8) (7)
(6) (5)
(8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2)
(3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C / W
1/3
Datasheet pdf - http://www.DataSheet4U.net/


Rohm Semiconductor Electronic Components Datasheet

SP8K3 Datasheet

Transistor

No Preview Available !

Transistors
zElectrical characteristics (Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
30
1.0
5.0
Typ.
17
23
25
600
200
120
8
10
37
11
8.4
1.9
3.3
Max.
10
1
2.5
24
33
35
11.8
Unit Conditions
µA VGS=20V, VDS=0V
V ID=1mA, VGS=0V
µA VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=7.0A, VGS=10V
mID=7.0A, VGS=4.5V
ID=7.0A, VGS=4V
S ID=7.0A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=3.5A, VDD 15V
ns VGS=10V
ns RL=4.29
ns RGS=10
nC VDD 15V
nC VGS=5V
nC ID=7.0A
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Forward voltage
Pulsed
Symbol Min.
VSD
Typ.
Max.
1.2
Unit
V
www.DataSheet.co.kr
Conditions
IS=6.4A, VGS=0V
SP8K3
2/3
Datasheet pdf - http://www.DataSheet4U.net/


Part Number SP8K3
Description Transistor
Maker Rohm
PDF Download

SP8K3 Datasheet PDF






Similar Datasheet

1 SP8K1 Switching (30V / 5.0A)
ETC
2 SP8K2 Switching
Rohm
3 SP8K22 Switching
Rohm
4 SP8K22FRA Power MOSFET
ROHM
5 SP8K23FRA Power MOSFET
ROHM
6 SP8K24 Switching
Rohm
7 SP8K24FRA MOSFET
ROHM
8 SP8K2FRA Power MOSFET
ROHM
9 SP8K3 Transistor
Rohm





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy