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Rohm Semiconductor Electronic Components Datasheet

SP8K31 Datasheet

4V Drive Nch+Nch MOSFET

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Transistor
4V Drive Nch+Nch MOSFET
SP8K31
SP8K31
zStructure
Silicon N-channel
MOSFET
zFeatures
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
zDimensions (Unit : mm)
SOP8
zApplications
Switching
zPackaging dimensions
Package
Type
Code
Basic ordering unit (pieces)
SP8K31
Taping
TB
2500
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP 1
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
IS
ISP 1
PD 2
Channel temperature
Tch
Range of storage temperature
Tstg
1 Pw 10µs, Duty cycle 1%
2 Mounted on a ceramic board.
Limits
60
±20
±3.5
±14
1.0
14
2.0
150
55 to +150
Each lead has same dimensions
zEquivalent circuit
(8) (7)
(6) (5)
(8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2)
(3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Unit
V
V
A
A
A
A
W
°C
°C
1/4


Rohm Semiconductor Electronic Components Datasheet

SP8K31 Datasheet

4V Drive Nch+Nch MOSFET

No Preview Available !

Transistor
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
Min.
60
1.0
2.5
Typ.
85
100
105
250
60
30
7
14
25
7
3.7
1.2
1.2
Max.
±10
1
2.5
120
140
150
5.2
Unit Conditions
µA VGS=±20V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 60V, VGS=0V
V VDS= 10V, ID= 1mA
mID= 3.5A, VGS= 10V
mID= 3.5A, VGS= 4.5V
mID= 3.5A, VGS= 4.0V
S VDS= 10V, ID= 3.5A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 30V
ns ID= 1.8A
VGS= 10V
ns RL= 17
ns RG=10
nC VDD 30V, VGS= 5V
nC ID= 3.5A
nC RL= 8.6, RG= 10
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.2 V IS=3.5A, VGS=0V
SP8K31
2/4


Part Number SP8K31
Description 4V Drive Nch+Nch MOSFET
Maker Rohm
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SP8K31 Datasheet PDF






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