SP8M24 Description
SP8M24 Transistors 4V Drive Nch+Pch MOS FET SP8M24 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions (Unit : Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Tr1 : zFeatures 1) Low on-resistance.
SP8M24 Key Features
- 33 41 46
- 1 2.5 46 57 64
- IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold vo
- Drain-source breakdown voltage V(BR) DSS -45 Zero gate voltage drain current IDSS
- Gate threshold voltage VGS (th) -1.0
- Static drain-source on-state ∗
- RDS (on) resistance
- Yfs ∗ 4.5 Forward transfer admittance Ciss
- Input capacitance
- Output capacitance Coss