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Rohm Semiconductor Electronic Components Datasheet

UMG2N Datasheet

NPN 100mA 50V Complex Digital Transistors

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UMG2N pdf
EMG2 / UMG2N / FMG2A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
Tr1 and Tr2
50V
100mA
47kW
47kW
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 47kW.
2) Two DTC144E chips in one package.
3) Emitter(GND)-common type.
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
lOutline
EMT5
(5)
(1)
(2)
(3)
(4)
EMG2
(SC-107BB)
SMT5
(1)
(5)
(4)
(3)
(2)
FMG2A
(SC-74A)
UMT5
(4)
(3)
(2)
(1)
(5)
UMG2N
SOT-353 (SC-88A)
lInner circuit
EMG2 / UMG2N
IN GND IN
(3) (2) (1)
FMG2A
IN GND IN
(3) (4) (5)
lApplication
Inverter circuit, Interface circuit, Driver circuit
(4)
OUT
(5)
OUT
(2)
OUT
(1)
OUT
lPackaging specifications
Part No.
Package
EMG2
UMG2N
FMG2A
EMT5
UMT5
SMT5
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T148
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
Marking
G2
G2
G2
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/7
2012.06 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

UMG2N Datasheet

NPN 100mA 50V Complex Digital Transistors

No Preview Available !

UMG2N pdf
EMG2 / UMG2N / FMG2A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EMG2 / UMG2N
FMG2A
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IO
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
Values
50
-10 to +40
30
100
150 (Total)*3
300 (Total)*4
150
-55 to +150
Unit
V
V
mA
mA
mW
mW
°C
°C
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
Output current
DC current gain
Input resistance
Resistance ratio
II
IO(off)
GI
R1
R2/R1
Conditions
VCC = 5V, IO = 100mA
VO = 0.3V, IO = 2mA
IO / II = 10mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
Transition frequency
fT *1
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Min.
-
3
-
-
-
68
32.9
0.8
Typ.
-
-
0.1
-
-
-
47
1
Max.
0.5
-
0.3
0.18
0.5
-
61.1
1.2
Unit
V
V
mA
mA
-
kW
-
- 250 - MHz
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/7
2012.06 - Rev.B


Part Number UMG2N
Description NPN 100mA 50V Complex Digital Transistors
Maker Rohm
Total Page 8 Pages
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