UMG8N
Key Features
- 1 T VCE = 10V, IE = -5mA, f = 100MHz
- 1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. Values Min. Typ. Ma
- Part: UMG8N
- Description: Dual Digital Transistor
- Category: Transistor
- Manufacturer: ROHM
- Size: 1.13 MB