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RLT760-10G - Laser Diode

Description

RLT760-10G is a Laser Diode emitting at typical 760 nm with rated output power of 10 mW CW at room temperature.

The 9 mm TO package includes a cap and flat window, and contains a built in monitor PD.

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Datasheet Details

Part number RLT760-10G
Manufacturer Roithner
File Size 526.29 KB
Description Laser Diode
Datasheet download datasheet RLT760-10G Datasheet

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Full PDF Text Transcription

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RLT760-10G v 1.1 04.08.2013 Description RLT760-10G is a Laser Diode emitting at typical 760 nm with rated output power of 10 mW CW at room temperature. The 9 mm TO package includes a cap and flat window, and contains a built in monitor PD. Maximum Ratings Parameter Optical Output Power Operating Temperature Storage Temperature Soldering Temperature Symbol PO TCASE TSTG TSOLD Min. -20 -40 Values Max. 10 +60 +85 180 Unit mW °C °C °C Specifications Parameter Central Wavelength Optical Output Power Emitting Area Threshold Current Forward Current Forward Voltage Beam Divergence Beam Divergence Spectral Width (FWHM) Static Alignment Positional Accuracy Mode Structure Slope Efficiency Monitor Current Symbol λC PO WxH ITH IOP UOP ӨII Ө┴ Δλ Δa II x ΔX, ΔY, ΔZ η IM Min. 755 - 30 150 1.
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