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RLT80805MGS - Laser Diode

Description

SYMBOL RATED VALUE Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) Po Top Tstg VLDR VPDR 5 -10 to +50 -40 to +85 2 30 OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION SYMBOL Lasing Wavelength (nm) Threshold C

Features

  • Index Guided MQW Structure.
  • Wavelength : 808 nm (Typ. ).
  • Optical Power : 5 mW CW.
  • Threshold Current : 25 mA ( Typ. ).
  • Package Style : TO-18 (5.6 mmØ).

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Datasheet Details

Part number RLT80805MGS
Manufacturer Roithner
File Size 144.36 KB
Description Laser Diode
Datasheet download datasheet RLT80805MGS Datasheet

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Full PDF Text Transcription

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RLT80805MGS Laser Diode Technical Data ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) Features • Index Guided MQW Structure • Wavelength : 808 nm (Typ.) • Optical Power : 5 mW CW • Threshold Current : 25 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ) DESCRIPTION SYMBOL RATED VALUE Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) Po Top Tstg VLDR VPDR 5 -10 to +50 -40 to +85 2 30 OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION SYMBOL Lasing Wavelength (nm) Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor Current (mA) Slope Efficiency (mW/mA) Beam Divergence ⎪⎢ (°) Beam Divergence ⊥ (°) Astigmatism (μm) λp Ith Iop Vop Im η θ⎪⎢ θ⊥ As MIN. 803 20 17 1.8 0.1 0.
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