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RLT808500G
TECHNICAL DATA
High Power Infrared Laserdiode
Structure: High Efficiency MOVCD Quantum Well Design
Lasing wavelength: 808 nm typ.
Output power: 500 mW, cw
NOTE!
Package: 9 mm
LASERDIODE MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power LD Reverse Voltage PD Reverse Voltage Operating Temperature Storage Temperature
Po VR(LD) VR(PD)
TC TSTG
RATING 550 2 30
-10 .. +40 -40 ..
RLT808500G Datasheet
