S808200MG - Infrared Laser Diode

Features

Lasing Mode Structure: multi mode.
Peak Wavelength : typ. 808 nm.
Optical Ouput Power: 200 mW.
Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr VrPD TC Tstg Value 200 2 30 -10 … +40 -10 … +85 Unit mW V V °C °C Specif.

Roithner

Datasheet Details

Part number	S808200MG
Manufacturer	Roithner
File Size	329.41 KB
Description	Infrared Laser Diode
Datasheet	S808200MG Datasheet

📁 Similar Datasheet

S8082 - 1CH Bi-Directional Motor Drive IC (Kodenshi)
S80830 - S-80830 (Seiko Instruments)
S80 - SMD Single Phase Bridge Rectifier (Diotec)
S80 - Surface Mount Si-Bridge Rectifiers (Diotec Semiconductor)
S80016 - Series 8000 Fuseblocks (Cooper Electronic Technologies)
S80016LK7 - SYNCHRONOUS DRAM (SPECtek)
S8006DS2 - Thyristors (Littelfuse)
S8006DS3 - Thyristors (Littelfuse)
S8006LS2 - Thyristors (Littelfuse)
S8006LS3 - Thyristors (Littelfuse)

Other Datasheets by Roithner

Full PDF Text Transcription

Click to expand full text

S808200MG TECHNICAL DATA Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 808 nm • Optical Ouput Power: 200 mW • Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr VrPD TC Tstg Value 200 2 30 -10 … +40 -10 … +85 Unit mW V V °C °C Specifications (TC=20°C) Item Optical Specifications CW Output Power Center Wavelength FWHM Beam Divergence Electrical Specifications Threshold Current Operating Current Slope Efficiency Operating Voltage Monitor Current Symbol PO λC θ║ θ┴ Ith Iop η Uop Im Min. 805 - 0.8 - Typ.

Published: Mar 4, 2015 |