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H2A1-H1050 - IR High Power single chip LED

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Part number H2A1-H1050
Manufacturer Roithner Laser
File Size 321.39 KB
Description IR High Power single chip LED
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H2A1-H1050 IR High Power single chip LED H2A1-H1050 is a GaAlAs based, high power 1050 nm single chip LED in standard hexagonal Aluminum package for general application. Slots i n the A luminum-core P CB allow f or easy m ounting of standard c ollimating optics an d a re also suitable f or M3 or M4 m ounting s crews. Lar ge el ectrical i nterconnection pads on t he P CB al low f or c onvenient installation. Specifications • • • • Structure: GaAlAs Peak Wavelength: 1050 nm Optical Output Power: typ. 50 mW Life Time: > 10.000 hours Housing: standard emitter package • Absolute Maximum Ratings (Ta=25°C) Parameter Power Dissipation, DC Forward Current, DC Pulsed Current (1% duty cycle, 1kHz) Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature (max.
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