RU16P8M4 Datasheet PDF (P-Channel Advanced Power MOSFET)

RU16P8M4 - P-Channel Advanced Power MOSFET

Description

G D D S D PIN1 S D D SDFN2020 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted

Features

-16V/-8A, RDS (ON) =40mΩ(Typ. )@VGS=-4.5V RDS (ON) =65mΩ(Typ. )@VGS=-2.5V.
Super High Dense Cell Design.
Fast Switching Speed.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

Datasheet Details

Part number	RU16P8M4
Manufacturer	Ruichips
File Size	292.86 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU16P8M4 Datasheet
Additional preview pages of the RU16P8M4 datasheet.

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Full PDF Text Transcription

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RU16P8M4 P-Channel Advanced Power MOSFET Features • -16V/-8A, RDS (ON) =40mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-2.5V • Super High Dense Cell Design • Fast Switching Speed • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Swtich • Battery Charge • DC/DC Converters Pin Description G D D S D PIN1 S D D SDFN2020 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=-4.5V) ID② Continuous Drain Current@TA(VGS=-4.

Published: Apr 25, 2016 |