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RU20130L Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU20130L N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU20130L
Manufacturer Ruichips
File Size 292.45 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU20130L-Ruichips.pdf

General Description

TO-252 Applications • High Frequency Synchronous Buck Converters for puter Processor Power • DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2012 Rating 20 ±20 175 -55 to 175 ① 120 ② 520 ① 130 ① 96 108 53.5 1.4 Unit V °C °C A A A W W °C/W 56 mJ .ruichips.

RU20130L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20130L Unit Min.

Key Features

  • 20V/130A, RDS (ON) =2.2mΩ(Typ. )@VGS=10V RDS (ON) =4.5mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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