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RU20P7C - P-Channel Advanced Power MOSFET

General Description

D G S SOT23-3 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 3

Key Features

  • -20V/-5A, RDS (ON) =20mΩ(Typ. )@VGS=-4.5V RDS (ON) =30mΩ(Typ. )@VGS=-2.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU20P7C
Manufacturer Ruichips
File Size 385.53 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU20P7C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU20P7C P-Channel Advanced Power MOSFET Features • -20V/-5A, RDS (ON) =20mΩ(Typ.)@VGS=-4.5V RDS (ON) =30mΩ(Typ.)@VGS=-2.