RU3020L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU3020L n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU3020L
Manufacturer	Ruichips
File Size	287.60 KB
Description	N-Channel Advanced Power MOSFET
Download	RU3020L Download (PDF)

General Description

TO-252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A–SEP., 2012 Rating 30 ±20 175

Overview

RU3020L N-Channel Advanced Power MOSFET MOSFET.

Key Features

30V/20A, RDS (ON) =15 mΩ(Typ. )@VGS=10V RDS (ON) =25 mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

More Datasheets from Ruichips

Part Number	Description
RU3020H	N-Channel Advanced Power MOSFET
RU30230R	N-Channel Advanced Power MOSFET
RU30231R	N-Channel Advanced Power MOSFET
RU30290R	N-Channel Advanced Power MOSFET
RU30291R	N-Channel Advanced Power MOSFET
RU30100L	N-Channel Advanced Power MOSFET
RU30100R	N-Channel Advanced Power MOSFET
RU30105L	N-Channel Advanced Power MOSFET
RU30105R	N-Channel Advanced Power MOSFET
RU30106L	N-Channel Advanced Power MOSFET