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RU30291R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU30291R
Manufacturer Ruichips
File Size 302.20 KB
Description N-Channel Advanced Power MOSFET
Download RU30291R Download (PDF)

General Description

TO-220 Applications • DC-DC Converters and Off-line UPS • Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor C

Overview

RU30291R N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 30V/290A, RDS (ON) =1.8mΩ(Typ. )@VGS=10V RDS (ON) =2.6mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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