RU30E4B mosfet equivalent, n-channel advanced power mosfet.
* 30V/4A,
RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* ESD protected(Rating 2KV HBM)
* Reliable and Rugged .
* Load Switch
Pin Description
D
G S
SOT23
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C.
D
G S
SOT23
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuou.
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