RU30E4B Overview
D G S SOT23 D G Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC RθJA③ -Junction to Case -Junction to Ambient...
RU30E4B Key Features
- 30V/4A
- Super High Dense Cell Design
- ESD protected(Rating 2KV HBM)
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS pliant)
