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RU30E4B Datasheet, Ruichips

RU30E4B mosfet equivalent, n-channel advanced power mosfet.

RU30E4B Avg. rating / M : 1.0 rating-15

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RU30E4B Datasheet

Features and benefits


* 30V/4A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V
* Super High Dense Cell Design
* ESD protected(Rating 2KV HBM)
* Reliable and Rugged .

Application


* Load Switch Pin Description D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C.

Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuou.

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