RU40231Q2 Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU40231Q2 n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU40231Q2
Manufacturer	Ruichips
File Size	293.48 KB
Description	N-Channel Advanced Power MOSFET
Download	RU40231Q2 Download (PDF)

General Description

TO-3P Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 40 ±20 175 -55 to 175 ① 230

Overview

RU40231Q2 N-Channel Advanced Power MOSFET MOSFET.

Key Features

40V/230A, RDS (ON) =2.3mΩ(Typ. )@VGS=10V RDS (ON) =3.5mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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