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RU602B Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU602B
Manufacturer Ruichips
File Size 307.65 KB
Description N-Channel Advanced Power MOSFET
Download RU602B Download (PDF)

General Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TA=25°C 60 ±25 150 -55 to 150 1.1 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA

Overview

RU602B N-Channel Advanced Power MOSFET.

Key Features

  • 60V/1.5A, RDS (ON) =220mΩ(Typ. )@VGS=10V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).