Datasheet4U Logo Datasheet4U.com

RU6055S Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU6055S
Manufacturer Ruichips
File Size 292.05 KB
Description N-Channel Advanced Power MOSFET
Download RU6055S Download (PDF)

General Description

TO-263 Applications • Switching Application Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

B– OCT., 2012 Rating 60 ±25 175 -55 to 175 60 â‘  240 â‘

Key Features

  • 60V/60A, RDS (ON) =9mΩ (Typ. ) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Fast Switching.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free,RoHS compliant RU6055S N-Channel Advanced Power MOSFET MOSFET Pin.