Datasheet4U Logo Datasheet4U.com

RU6199Q Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU6199Q
Manufacturer Ruichips
File Size 282.22 KB
Description N-Channel Advanced Power MOSFET
Download RU6199Q Download (PDF)

General Description

TO-247 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case TC=25°C TC=100°C Drain-Source Avalanche Ratings ③ Avalanche Energy ,Single Pulsed StoraEgeASTemperature Range -55 to 150 Copyright© Ruichips Semiconductor Co.,

Overview

RU6199Q N-Channel Advanced Power MOSFET.

Key Features

  • 60V/200A RDS (ON)=2.8 mΩ(Typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available.