Capacity: 500 Gb Size: 2.5'' Interface: Serial ATA 3.0 Gbps Buffer: 8 Mo 5400 RPM Acoustics - Idle: 24 dB - Performance Seek: 26 dB Performance Average Seek time (typical): 12 ms Average Latency: 5.6 ms Data Transfert Media to/from buffer: 145 Mo/s Data Transfert Buffer to/from Host: 300 Mo/s Drive Ready Time (typical): 4 s
Power Requirements - Voltage: + 5 V ± 5% - Spin-up current: 1000 mA - Seek (typical): 2 W - Read/Write (typical): 2.2 W - Idle: 0.7 W - Standby (Typical): 0.2 W - Sleep (Typ.
N-Channel Enhancement Mode Field Effect Transistor SMD
HAOHAI
Other Datasheets by Samsung Semiconductor
Part Number
Description
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HNM500MBB
SAMSUNG
Imagine a hard drive that combines technology, performance and ecology ... Samsung invented it for you with its range of hard drives that consume less energy and are much quieter than a conventional hard disk.
Features Capacity: 500 Gb Size: 2.5'' Interface: Serial ATA 3.0 Gbps Buffer: 8 Mo 5400 RPM Acoustics - Idle: 24 dB - Performance Seek: 26 dB Performance Average Seek time (typical): 12 ms Average Latency: 5.6 ms Data Transfert Media to/from buffer: 145 Mo/s Data Transfert Buffer to/from Host: 300 Mo/s Drive Ready Time (typical): 4 s
Power Requirements - Voltage: + 5 V ± 5% - Spin-up current: 1000 mA - Seek (typical): 2 W - Read/Write (typical): 2.2 W - Idle: 0.7 W - Standby (Typical): 0.2 W - Sleep (Typical) : 0.