MBRD20150CT - SCHOTTKY RECTIFIER

Features

150 ℃ TJ operation.
Center tap configuration.
Low forward voltage drop.
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
High frequency operation.
Guard ring for enhanced ruggedness and long term reliability.
This is a Pb.
Free Device.
All SMC parts are traceable to the wafer lot.
Additional testing can be offered upon request Mechanical Dimensio.

SANGDEST MICROELECTRONICS

Part number	MBRD20150CT
Manufacturer	SANGDESTMicroelectronics
File Size	176.22 KB
Description	SCHOTTKY RECTIFIER
Datasheet	MBRD20150CT Datasheet
Additional preview pages of the MBRD20150CT datasheet.

MBRD20150CT - High Power Schottky Barrier Rectifier (Sooner Power Semiconduction)
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MBRD20100 - Schottky Barrier Rectifier (MCC)
MBRD20100 - Schottky Barrier Rectifier (GME)
MBRD20100 - SCHOTTKY RECTIFIER (SMC Diode)
MBRD20100CT - SCHOTTKY BARRIER RECTIFIER (First Silicon)
MBRD20100CT - 20A SCHOTTKY BARRIER RECTIFIER (Diodes)
MBRD20100CT - SCHOTTKY BARRIER RECTIFIER (JCST)
MBRD20100CT - High Power Schottky Barrier Rectifier (Sooner Power Semiconduction)
MBRD20100CT - SCHOTTKY RECTIFIER (SMC-DIODE)

Other Datasheets by SANGDEST MICROELECTRONICS

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SANGDEST MICROELECTRONICS MBRD20150CT Technical Data Data Sheet N0050, Rev.

Published: Dec 3, 2015 |