MBRD20200CT - SCHOTTKY RECTIFIER

Features

150 ℃ TJ operation.
Center tap configuration.
Low forward voltage drop.
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
High frequency operation.
Guard ring for enhanced ruggedness and long term reliability.
This is a Pb.
Free Device.
All SMC parts are traceable to the wafer lot.
Additional testing can be offered upon request Mechanical Dimensi.

SANGDEST MICROELECTRONICS

Part number	MBRD20200CT
Manufacturer	SANGDESTMicroelectronics
File Size	182.10 KB
Description	SCHOTTKY RECTIFIER
Datasheet	MBRD20200CT Datasheet
Additional preview pages of the MBRD20200CT datasheet.

MBRD20200CT - Schottky Barrier Rectifier (INCHANGE)
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MBRD20200CT - 20A SCHOTTKY BARRIER RECTIFIER (Diodes)
MBRD2020 - Schottky Barrier Rectifier (GME)
MBRD20100 - Schottky Barrier Rectifier (MCC)
MBRD20100 - Schottky Barrier Rectifier (GME)
MBRD20100 - SCHOTTKY RECTIFIER (SMC Diode)
MBRD20100CT - SCHOTTKY BARRIER RECTIFIER (First Silicon)
MBRD20100CT - 20A SCHOTTKY BARRIER RECTIFIER (Diodes)
MBRD20100CT - SCHOTTKY BARRIER RECTIFIER (JCST)

Other Datasheets by SANGDEST MICROELECTRONICS

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SANGDEST MICROELECTRONICS MBRD20200CT Technical Data Data Sheet N0816, Rev.

Published: Dec 3, 2015 |