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DKI04035 Datasheet Preview

DKI04035 Datasheet

N Channel Trench Power MOSFET

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40 V, 48 A, 3.3 mΩ Low RDS(ON)
N ch Trench Power MOSFET
DKI04035
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
ID ---------------------------------------------------------- 48 A
RDS(ON) ------------ 4.3 mΩ max. (VGS = 10 V, ID = 51 A)
Qg------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-252
(4)
D
(1) (2) (3)
GDS
(3) (2) (1)
SDG
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test conditions
Drain to Source Voltage
VDS
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
VGS
ID TC = 25 °C
IDM
PW 100µs
Duty cycle 1 %
IS
ISM
PW 100µs
Duty cycle 1 %
VDD = 20 V, L = 1 mH,
EAS
IAS = 11.2 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
IAS
Power Dissipation
Operating Junction Temperature
PD TC = 25 °C
TJ
Storage Temperature Range
TSTG
* When mounted on 1 inch square 2 oz copper pad on 1.5 × 1.5 inch.
Rating
40
± 20
48
96
48
96
126
23.3
61
150
55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
DKI04035-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1




SANKEN

DKI04035 Datasheet Preview

DKI04035 Datasheet

N Channel Trench Power MOSFET

No Preview Available !

DKI04035
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test Conditions
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA Mounted on PCB*
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
Min. Typ. Max. Unit
− − 2.0 °C/W
− − 35.7 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Breakdown
Voltage
V(BR)DSS
Drain to Source Leakage Current
IDSS
Gate to Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Static Drain to Source
On-Resistance
RDS(ON)
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Total Gate Charge (VGS = 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
RG
Ciss
Coss
Crss
Qg1
Qg2
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 40 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 1 mA
ID = 51 A, VGS = 10 V
ID = 25.5 A, VGS = 4.5 V
f = 1 MHz
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDS = 20 V
ID = 58.5 A
VDD = 20 V
ID = 58.5 A
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
IS = 51 A, VGS = 0 V
IF = 58.5 A
di/dt = 100 A/µs
Refer to Figure 3
Min. Typ. Max. Unit
40 − − V
− − 100 µA
− − ± 100 nA
1.0 2.0 2.5
3.3 4.3
4.1 6.0
1.1
3910
620
360
56.1
26.4
9.0
9.7
6.2
8.4
28.9
17.9
V
Ω
pF
nC
ns
0.9 1.5 V
38.7
ns
37.2
nC
DKI04035-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
2


Part Number DKI04035
Description N Channel Trench Power MOSFET
Maker SANKEN
Total Page 8 Pages
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