EKI04036 Description
40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04036.
EKI04036 Key Features
- V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
- ID ---------------------------------------------------------- 80 A
- RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A)
- Qg------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A)
- Low Total Gate Charge
- High Speed Switching
- Low On-Resistance
- Capable of 4.5 V Gate Drive
- 100 % UIL Tested
- RoHS pliant