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FKI10198 Datasheet Preview

FKI10198 Datasheet

Power MOSFET

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100 V, 31 A, 13.2 mΩ Low RDS(ON)
N ch Trench Power MOSFET
FKI10198
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA)
ID ---------------------------------------------------------- 31 A
RDS(ON) -------- 18.4 mΩ max. (VGS = 10 V, ID = 23.4 A)
Qg------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A)
Package
TO-220F
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
(1) (2) (3)
s G D S
Design Equivalent circuit
Not to scale
or New Power Supplies
D(2)
G(1)
S(3)
ded f Absolute Maximum Ratings
n Unless otherwise specified, TA = 25 °C
e Parameter
Symbol
m Drain to Source Voltage
VDS
m Gate to Source Voltage
VGS
o Continuous Drain Current
ID
ec Pulsed Drain Current
IDM
R Continuous Source Current
(Body Diode)
IS
t Pulsed Source Current
No (Body Diode)
ISM
Test conditions
TC = 25 °C
PW 100µs
Duty cycle 1 %
PW 100µs
Duty cycle 1 %
VDD = 50 V, L = 1 mH,
Rating
100
± 20
31
62
31
62
Unit
V
V
A
A
A
A
Single Pulse Avalanche Energy
EAS
IAS = 11.2 A, unclamped,
RG = 4.7 Ω
126
mJ
Refer to Figure 1
Avalanche Current
IAS
23.3
A
Power Dissipation
PD
TC = 25 °C
40
W
Operating Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
55 to 150
°C
FKI10198-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
1
May. 29, 2014
http://www.sanken-ele.co.jp




SANKEN

FKI10198 Datasheet Preview

FKI10198 Datasheet

Power MOSFET

No Preview Available !

FKI10198
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA
Test Conditions
Min. Typ. Max. Unit
3.1 °C/W
62.5 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 100 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 1 mA
Min.
100
1.0
Typ. Max. Unit
s
V
ign
100
µA
s
± 100 nA
De2.0
2.5
V
Static Drain to Source
w On-Resistance
ID = 23.4 A, VGS = 10 V
RDS(ON)
ID = 11.7 A, VGS = 4.5 V
e Gate Resistance
RG
f = 1 MHz
N Input Capacitance
Ciss
VDS = 25 V
r Output Capacitance
Coss
VGS = 0 V
o f = 1 MHz
f Reverse Transfer Capacitance
Crss
d Total Gate Charge (VGS = 10 V)
Qg1
e Total Gate Charge (VGS = 4.5 V)
Qg2
VDS = 50 V
d Gate to Source Charge
Qgs
ID = 23.4 A
en Gate to Drain Charge
Qgd
Turn-On Delay Time
m Rise Time
m Turn-Off Delay Time
co Fall Time
e Source to Drain Diode Forward
R Voltage
Source to Drain Diode Reverse
t Recovery Time
o Source to Drain Diode Reverse
N Recovery Charge
td(on)
tr
VDD = 50 V
ID = 23.4 A
td(off)
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
tf
VSD
IS = 23.4 A, VGS = 0 V
trr
IF = 23.4 A
di/dt = 100 A/µs
Qrr
Refer to Figure 3
13.2
14.0
1.1
3990
300
160
57.7
27.1
10.1
7.5
7.0
6.5
34.2
13.9
0.9
49.2
92.7
18.4
19.3
1.5
Ω
pF
nC
ns
V
ns
nC
FKI10198-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
2
May. 29, 2014


Part Number FKI10198
Description Power MOSFET
Maker SANKEN
PDF Download

FKI10198 Datasheet PDF






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