GKI04101 Description
40 V, 26 A, 9.3 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI04101.
GKI04101 Key Features
- V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
- ID ---------------------------------------------------------- 26 A
- RDS(ON) -------- 11.6 mΩ max. (VGS = 10 V, ID = 18.8 A)
- Qg------- 5.1 nC (VGS = 4.5 V, VDS = 20 V, ID = 23.6 A)
- Low Total Gate Charge
- High Speed Switching
- Low On-Resistance
- Capable of 4.5 V Gate Drive
- 100 % UIL Tested
- RoHS pliant