HXB15H1G800CF Overview
July 2014 HXB15H1G800CF HXB15H1G160CF 1-Gbit Double-Date-Rate-Three SDRAM DDR3 SDRAM EU RoHS HF pliant Products Data Sheet Rev. 1, 2014-07 Initial version Data Sheet HXB15H1G(80/16)0CF 1-Gbit Double-Data-Rate-Three SDRAM We Listen to Your ments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document.
HXB15H1G800CF Key Features
- 1.5 V ±0.075 V Power Supply
- Off-Chip-Driver impedance adjustment (OCD) and
- DRAM organizations with 8/16 data in/outputs
- Double Data Rate architecture
- two data transfers per clock cycle
- eight internal banks for concurrent operation
- Programmable CAS Latency: 6, 7, 8, 9, 10, 11, 12, 13
- Programmable Burst Length: 4/8 with both nibble
- Differential clock inputs (CK and CK)
- Bi-directional, differential data strobes (DQS and DQS) are