S10N65C mosfet equivalent, 650v n-channel mosfet.
* 9.5A, 650V, RDS(on) = 0.75Ω @VGS = 10 V
* Low gate charge ( typical 36 nC)
* Low Crss ( typical 5.8pF)
* Fast switching
* 100% avalanche tested
.
in switching power supplies and adaptors.
Features
* 9.5A, 650V, RDS(on) = 0.75Ω @VGS = 10 V
* Low gate charge (.
The 10N65 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed.
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