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SICDS50V6 Datasheet Preview

SICDS50V6 Datasheet

Current Sensors

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IPN = 50A
Advantages
Very good linearity
Excellent accuracy
Low temperature drift
Wide frequency bandwidth
Optimized response time
No insertion losses
High immunity against external
Interference
Excellent performance and price
  SICDS50V6
Current Sensors
Features
Hall effect measuring principle
Galvanic isolation between primary and
secondary circuit
Low power consumption
Extended measuring range
Insulated plastic case recognized according
to UL 94-V0
Industrial applications
AC variable speed drives
Battery supplied applications
Uninterruptible Power Supplies (UPS)
Power supplies for welding applications
Static converters for DC motor drives
Switched-Mode Power Supplies (SMPS)
www.DataSheet.net/
Type
SICDS50V6
TYPES OF PRODUCTS
Primary nominal Primary current
current
measuring range
r. m. s IPN (A)
IP (A)
50 0~±70
Measuring resistance (@70)
RM ()
10~100
10 ~ 50
50~160
50 ~ 90
with±12V@±50Amax
with±12V@±70Amax
with±15V@±50Amax
with±15V@±70Amax
General Description
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between
the primary circuit (high power) and the secondary circuit (electronic circuit)
1 V2.00 May 1, 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/




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SICDS50V6 Datasheet Preview

SICDS50V6 Datasheet

Current Sensors

No Preview Available !

Parameters Table
  SICDS50V6
Current Sensors
PARAMETERS
Supply voltage(±5%)
Current consumption
Secondary nominal r.m.s.
current
Conversion ratio
Linearity
Accuracy
SYMBOL UNIT
VALUE
Electrical data
VC V ±12…15
IC mA 10(@±15)+Is
ISN mA
50
KN 1:1000
Accuracy - Dynamic performance data
εL %
<±0.15
XG %
<±0.65
<±0.90
Offset current
Thermal drift of Io
Response time
di/dt accurately followed
Frequency bandwidth (1)
Ambient operating temperature
Ambient storage temperature
Secondary coil resistance
R. m. s voltage for AC isolation
test
Impulse withstand voltage
1.2/50us
Creepage distance
Clearance distance
Comparative Tracking Index
IO mA
<±0.20
Typ Max
IOT mA ±0.1 ±0.6
±0.2 ±1.0
tr µS
di/dt A/µS
BW kHz
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<1
>200
DC~200
General data
TA
TS
Rs
-40 ~ +85
-40 ~ +90
80
Isolation characteristics
Vd KV
2.5
Vw KV
dCp mm
dCI mm
CTI
5.7
5
5
175
CONDITIONS
@IPN
@ IPN , VC = ±15V, TA =
25°C
@ IPN , VC = ±12…15V,
TA = 25°C
@ IP = 0,TA = 25°C
@ IP = 0,-25°C+85°C
@ IP = 0,-40°C-25°C
@ 90% of IPN step
@-1dB
@ TA = 70°C
@50Hz, 1 min
Group IIIa
Notes:
Please refer to derating curves in the technical file to avoid excessive core heating at high frequency.
2 V2.00 May 1, 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number SICDS50V6
Description Current Sensors
Maker SEC
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