SS259 Datasheet | SEC

CMOS Omnipolar High Sensitivity Micropower Hall Switch Packages Features and Benefits - - - - Operation down to 2.5V Micropower consumption for battery powered applications High sensitivity for direct reed switch replacement applications Omnipolar, output switches with absolute value of North or South pole from magnet 3 pin SOT23 (suffix SO) 3 pin SIP (suffix UA)   Functional Block Diagram Application Examples - - - - Solid-state switch Handheld Wireless Handset Awake Switch Lid close sensor for battery powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications   .Data Sheet.net/ General Description: The SS259 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the B OP /B RP thresholds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the SS259 will be latched on (B OP ) in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off (B RP ) in the absence of a magnetic field.   V2.10 May 1, 2012 Datasheet pdf - http://..co.kr/ CMOS Omnipolar High Sensitivity Micropower Hall Switch Typical...