SS2609 Overview
The SS2609 Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits.
SS2609 Key Features
- CMOS Hall IC Technology
- Bipolar Output CMOS Multi-purpose latch
- Solid-State Reliability much better than reed
- Operation down to 2.5V
- Supply current down to 45μA, very low power
- CMOS inverter output (no pull-up resistance)
- High sensitivity for direct reed switch re
- Solid state switch
- Magneto-electric conversion switch
- Magnet proximity sensor for reed switch re