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SW10N60D Datasheet MOSFET

Manufacturer: SEMIPOWER

Datasheet Details

Part number SW10N60D
Manufacturer SEMIPOWER
File Size 649.65 KB
Description MOSFET
Download SW10N60D Download (PDF)

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.

Overview

SAMWIN SW10N60D N-channel TO-220F MOSFET.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 1.1Ω)@VGS=10V.
  • Gate Charge (Typical 35nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F 1 23 BVDSS : 600V ID : 10A RDS(ON) : 1.1Ω 2 1. Gate 2. Drain 3. Source General.