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SW13N50 - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 0.48Ω)@VGS=10V.
  • Gate Charge (Typ 32nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F 1 2 3 1. Gate 2. Drain 3. Source General.

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Datasheet preview – SW13N50

Datasheet Details

Part number SW13N50
Manufacturer SEMIPOWER
File Size 659.57 KB
Description MOSFET
Datasheet download datasheet SW13N50 Datasheet
Additional preview pages of the SW13N50 datasheet.

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Full PDF Text Transcription

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SAMWIN SW13N50 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.48Ω)@VGS=10V ■ Gate Charge (Typ 32nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 500V ID : 13A RDS(ON) : 0.
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