SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
3000W Axial Leaded
Transient Voltage Suppressors
l Peak power dissipation 3000W @10 x 1000 us Pulse
l Low profile package.
l Excellent clamping capability.
l Glass passivated junction.
l Fast response time: typically less than 1ps from 0 Volts to BV min
l Typical IR less than 2uA when VBR min above 12V.
l IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact)
l ESD protection of data lines in accordance with IEC 61000-4-2
l EFT protection of data lines in accordance with IEC 61000-4-4
l Halogen free and RoHS compliant
l Lead-free finish
l CASE: R-6 Molded Plastic
l Mounting Position: Any
l Polarity: by cathode band denotes uni-directional
device, none cathode band denotes bi-directional
l Terminal: Solder plated
Maximum Ratings and Characteristics @ 25°C Ambient Temperature (unless otherwise noted)
Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, FIG.1)
Power Dissipation on Infinite Heat Sink at TL=75°C
Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3)
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
See Table 1
-55 to 150
-55 to 150
1. Non-repetitive current pulse, per Fig.3 and derated above TA=25°C per Fig.2.
2. Measured on 8.3ms single half sine-wave, or equivalent square wave, for Unidirectional device only.
Rev. 2.0, 23-Nov.-16