SW226N - N-Channel Power MOSFET

SEMIWILL

General Description

This MOSFET is produced with advanced VDMOS technology of SEMIWILL.

This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics .

Key Features

High ruggedness.
R DS(ON) (Max. 2.3 Ω)@V GS=10V.
Gate Charge (Max.18nC).
Improved dv/dt Capability.
100% Avalanche Tested GD S TO-251 GD S TO-252.

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SW226N n-channel power mosfet by SEMIWILL - Datasheet Preview

Datasheet Details

Part number	SW226N
Manufacturer	SEMIWILL
File Size	1.26 MB
Description	N-Channel Power MOSFET
Datasheet	SW226N Datasheet

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Full PDF Text Transcription (Reference)

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SW226N PP0640SA - PP3500SC N-CHANNEL POWER MOSFET DESCRIPTION This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics . This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. G D S SCHEMATIC SYMBOL FEATURES • High ruggedness • R DS(ON) (Max. 2.3 Ω)@V GS=10V • Gate Charge (Max.18nC) • Improved dv/dt Capability • 100% Avalanche Tested GD S TO-251 GD S TO-252 PACKAGE TO-251 600 4.0 2.2 16 ±30 220 10.6 4.5 54 0.43 TO-252 300 2.3 110 05081.R11 2/11 REV.1205B2 Page 11 www.protekdevices.com www.semiwill.