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SEMTECH

1SS226 Datasheet Preview

1SS226 Datasheet

SILICON EPITAXIAL PLANAR DIODE

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1SS226
SILICON EPITAXIAL PLANAR DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 80 V
Total Capacitance
at VR = 0 , f = 1 MHz
Reverse Recovery Time
at IF = 10 mA
3
12
Marking Code: A7
SOT-23 Plastic Package
Symbol
VRM
VR
IO
IFM
IFSM
Ptot
Tj
Ts
Value
85
80
100
300
2
150
150
- 55 to + 150
Unit
V
V
mA
mA
A
mW
OC
OC
Symbol
VF
IR
CT
trr
Max.
1.2
0.5
3
4
Unit
V
µA
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008




SEMTECH

1SS226 Datasheet Preview

1SS226 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

1SS226
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008


Part Number 1SS226
Description SILICON EPITAXIAL PLANAR DIODE
Maker SEMTECH
Total Page 2 Pages
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