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HZ3B1 - SILICON EPITAXIAL PLANER ZENER DIODES

Download the HZ3B1 datasheet PDF (HZ3A1 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon epitaxial planer zener diodes.

Features

  • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc.
  • Wide spectrum from 1.6V through 38V of zener voltage provide flexible.

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Note: The manufacturer provides a single datasheet file (HZ3A1-SEMTECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HZ3B1
Manufacturer SEMTECH
File Size 439.00 KB
Description SILICON EPITAXIAL PLANER ZENER DIODES
Datasheet download datasheet HZ3B1 Datasheet

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Other Datasheets by SEMTECH
  • HZ3B2 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ3B3 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ30-1 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ30-2 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ30-3 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ33-1 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ33-2 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ33-3 - SILICON EPITAXIAL PLANER ZENER DIODES

Full PDF Text Transcription

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HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Absolute Maximum Ratings (Ta=25 oC) Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot Tj TS Value 500 175 -55 to +175 Unit mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.
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