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MMBTA92W
PNP Silicon Epitaxial Planar Transistor
for high voltage switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
300
V
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
HStorage Temperature Range CCharacteristics at Ta = 25 OC
Parameter DC Current Gain
Eat -VCE = 10 V, -IC = 1 mA
at -VCE = 10 V, -IC = 10 mA
Tat -VCE = 10 V, -IC = 30 mA
Collector Base Cutoff Current at -VCB = 200 V
Emitter Base Cutoff Current
Mat -VEB= 3 V
Collector Base Breakdown Voltage at -IC = 100 µA
ECollector Emitter Breakdown Voltage Sat -IC= 1 mA
-VCEO -VEBO
-IC Ptot Tj Tstg
300 5
500 200 150 - 55 to + 150
V V mA mW OC OC
Symbol
hFE hFE hFE -ICBO
-IEBO
-V(BR)CB
MMBTA92W Datasheet
