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MMBTSD2114
NPN Silicon Epitaxial Planar Transistor
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature Storage Temperature Range
1) Single pulse, Pw = 100 ms
TO-236 Plastic Package
Symbol
VCBO VCEO VEBO
IC ICP Ptot
Tj Tstg
Value
25
20
12 0.5 1 1) 200
150
- 55 to + 150
Unit V V V A
mW OC OC
Characteristics at Ta = 25 OC Parameter
Symbol Min. Typ. Max.
MMBTSD2114 Datasheet
