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MMDT1N434
NPN Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit applications
Collector (Output) Base (Input) R1 R2 Emitter (Common)
Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 50 50 6 100 200 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 5 V, IC = 5 mA www.DataSheet4U.
MMDT1N434 Datasheet
