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MPS3638A
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain at -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA at -VCE = 1 V, -IC = 50 mA at -VCE = 2 V, -IC = 300 mA Collector Cutoff Current at -VCE = 15 V Emitter Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 50 mA, -IB = 2.
MPS3638A Datasheet
