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RB500V-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Description

Cathode Anode 12 S9 Top View Marking Code: "S9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Power Dissipation Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperatu

Features

  • Small surface mounting type.
  • Low IR.
  • High reliability.

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Datasheet Details

Part number RB500V-40
Manufacturer SEMTECH
File Size 172.62 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB500V-40 Datasheet

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RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low IR • High reliability Applications • Low current rectification PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 S9 Top View Marking Code: "S9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Power Dissipation Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Symbol VRM Ptot VR IO IFSM Tj Ts Value 45 200 40 0.
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