Datasheet4U Logo Datasheet4U.com

RB551V-30 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Description

Cathode Anode 12 SA Top View Marking Code: "SA" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Charac

Features

  • Small surface mounting type.
  • Ultra low VF.
  • High reliability.

📥 Download Datasheet

Datasheet Details

Part number RB551V-30
Manufacturer SEMTECH
File Size 163.89 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB551V-30 Datasheet

📁 Similar Datasheet

  • RB551V-30 - Schottky barrier Diode (JCET)
  • RB551V-30 - Schottky Barrier Diode (GME)
  • RB551V-30 - Schottky Barrier Diode (ROHM)
  • RB551V-30 - SMD Schottky Barrier Diodes (Comchip)
  • RB551V-30 - SURFACE MOUNT SCHOTTKY BARRIER DIODE (LITE-ON)
  • RB551V-30 - SURFACE MOUNT SCHOTTKY BARRIER DIODE (WON-TOP)
  • RB551V-30 - Surface Mount Schottky Rectifier (Bruckewell)
  • RB551V-30 - SCHOTTKY DIODES (AiT Components)
  • RB551V-30 - Schottky Diodes (TRANSYS)
  • RB551V-30 - Schottky Barrier Diode (MCC)
Other Datasheets by SEMTECH
  • RB500V-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
  • RB520S-30 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
  • RB521G-30 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
  • RB521S-30 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
  • RB521S-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Full PDF Text Transcription

Click to expand full text
RB551V-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Ultra low VF • High reliability Applications • High frequency rectification switching regulation PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 SA Top View Marking Code: "SA" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 500 mA Reverse Current at VR = 20 V Note: ESD sensitive product handling required. Symbol VRM VR IO IFSM Tj Ts Value 30 20 0.5 2 125 - 40 to + 125 Unit V V A A OC OC Symbol VF IR Max. 0.36 0.
Published: |