RB706F-40 Datasheet SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Manufacturer: SEMTECH

Overview: RB706F-40 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low current.

Datasheet Details

Part number	RB706F-40
Manufacturer	SEMTECH
File Size	214.24 KB
Description	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Datasheet	RB706F-40-SEMTECH.pdf

Key Features

High reliability.
Low reverse current 3 12 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Bre.

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