1SS321 Datasheet Silicon Epitaxial Schottky Barrier Diode

Manufacturer: SEMTECH

Overview: www.DataSheet.co.kr 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching.

Datasheet Details

Part number	1SS321
Manufacturer	SEMTECH
File Size	184.50 KB
Description	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Datasheet	1SS321_SEMTECHELECTRONICS.pdf

Key Features

Low forward voltage.
Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current ( t = 10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 12 10 50 150 1 150 125 - 55 to + 125 Unit V V mA mA A mW O C C O Characteris.

1SS321 Distributor & Price

Compare 1SS321 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	1SS321	Silicon Epitaxial Schottky Barrier Type Diode	Toshiba Semiconductor
	1SS321	LOW VOLTAGE HIGH SPEED SWITCHING	Guangdong Kexin Industrial

More Datasheets from SEMTECH

Part Number	Description
1SS77WS	SILICON EPITAXIAL PLANAR